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Thin Film Analysis LuXpector THEA

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Scanning Infrared Depolarization SIRD PVA TePla
Scanning Infrared Depolarization SIRD PVA TePla
Compact Bench-Top Macro Inspection System VEpioneer® MACRO
Compact Bench-Top Macro Inspection System VEpioneer® MACRO

Thin Film Analysis LuXpector THEA

LuXpector THEA is a high-speed automatic thin film measurement system, combining ellipsometry and reflectometry for superior accuracy. Optimally designed for R&D and mass production, the device measures thickness, refractive index, and layer composition on semiconductor wafers (Si, SiC, GaN, GaAs, etc.) with a processing capability of up to 160 wafers/hour.

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  • Field of Study
  • Brand - PVA TePla

Key features


  • Combination of dual measurement technology: Simultaneous integration of ellipsometry and reflectometry to characterize thin films with high accuracy even on complex layer systems.

  • Outstanding performance: High processing speed of up to 160 wafers per hour with an automatic loading system, maximizing production yield.

  • In-depth analysis: Band Edge measurement capability allows for accurate determination of Aluminum (Al) concentration in AlGaN layers.

  • Surface noise elimination: Completely removes errors due to backside reflection, particularly effective on SiC wafers.

  • Flexible integration: Supports SECS/GEM connection standards, easy installation for automated production lines or for R&D purposes.

  • User friendly interface: Automates calibration and analysis processes, making operation and maintenance simple and less labor-intensive.

Detailed description


Technology & Operating principles

 LuXpector THEA uses a combination of ellipsometry (measuring the change in the polarization state of light upon reflection) and reflectometry (measuring the intensity of reflection). This combination allows the system to simultaneously analyze the thickness, refractive index, absorption coefficient, and chemical composition of thin film layers. The device uses an ellipsometer light source with a wavelength range of 300–780 nm and a reflectometer with a range of 400–1000 nm to ensure reliable measurement data.

In semiconductor manufacturing, controlling complex thin film layers on various materials (such as SiC or compound materials) often faces challenges due to reflection noise or the sensitivity limits of the equipment. LuXpector THEA thoroughly addresses these issues by eliminating back reflection noise while providing advanced analytical capabilities such as determining Al concentration in AlGaN. This helps engineers better control the deposition and etching processes, thereby minimizing waste.

Integration & Expansion 

The system is designed for maximum flexibility, supporting common wafer sizes from 200 mm to 300 mm. With a variety of cassette options (Open cassette, SMIF, FOUP) and automatic loading capabilities, the machine can operate independently in the laboratory or seamlessly integrate into large production lines according to industrial automation standards.

Detailed Specifications


ParameterValue
Supported wafer size200 mm, 300 mm
Measurement technologySpectroscopic ellipsometry & Spectroscopic reflectometry
Wafer processing speedUp to 160 wafers/hour (Wph)
Measurement propertiesFilm thickness, refractive index, absorption coefficient, reflectivity, deposition/etching rate, structural composition of the film
Wavelength Ellipsometer300 - 780 nm
Wavelength Reflectometer400 - 1000 nm
Support materialsSilicon (Si), Silicon Carbide (SiC), GaAs, Sapphire, Glass
System integration capabilityReady for SECS/GEM connection, supports integration with automated handling system (EFEM)


Field of Study Materials Sciences or Semiconductor Technology or Quantum Technology or Solar & Lithium Batteries
Brand PVA TePla
PVA_LuXpector_THEA_FLYER.pdf
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Thin Film Analysis LuXpector THEA
Thin Film Analysis LuXpector THEA
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