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Gap monitoring camera for Cz furnace ETA-SiCAM

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Gap monitoring camera for Cz furnace ETA-SiCAM

The ETA-SiCAM gap distance measurement device features a patented optical design, providing accuracy <0.5mm and a measurement speed of 5Hz. This is the optimal solution for maintaining stable thermodynamic control in Czochralski crystal pullers (Cz), enhancing the quality of Silicon ingots for solar cells and semiconductor components.

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  • Field of Study
  • Brand - NXT GmbH
NXT GmbH
NXT GmbH

Manufacturer of Reflective Technology Coating Thickness Spectroscopy

Key features


  • Breakthrough optical technology: Utilizing a new optical design (patent applied) that accurately records the distance between the heat shield and the molten Silicon.
  • Superior accuracy and measurement speed: Provides extremely low error (<0.5 mm) with a sampling rate of up to 5 Hz, meeting the requirements for continuous monitoring under extreme temperature conditions (up to 1500°C).
  • Flexible measurement range: Supports a wide gap distance scanning range from 3 – 30 mm, perfectly compatible with the kinematic variations throughout the ingot pulling process.
  • Visual data analysis: Integrates automatic data logging and trend data charting features to help engineers monitor quality fluctuations in real-time.
  • Easy integration capability: Provides a dedicated line interface, supporting quick connections and easy synchronization into existing crystal pulling systems.

Detailed description


Gap distance control using optical technology

In the process of producing monocrystalline Silicon wafers for electronic devices or solar panels, a thermal shield is used to stabilize the thermodynamic parameters at the transition region from liquid phase to solid phase. The inline measurement device ETA-SiCAM from NXT applies advanced optical technology, continuously capturing optical images to accurately determine the distance between the lower edge of the thermal shield and the surface of the liquid Silicon block at temperatures up to 1500°C.

Solving the problem of crystal quality loss

The gap distance is not fixed but continuously changes throughout the wafer development process, directly causing fluctuations in the thermal environment. If not monitored and readjusted, the risk of producing low-quality products is very high. ETA-SiCAM completely addresses this barrier with its distance measurement capability achieving an accuracy of less than 0.5 mm. Thanks to continuous feedback parameters, the crystal pulling system can instantly readjust, ensuring that the crystallization environment remains in an ideally stable state.

Real-time trend analysis and alert platform

In addition to the compact measurement head, the system provides a graphical interface that visually displays analysis curves and instantaneous measurement indices. All data is automatically recorded by the system and transmitted via a communication standard, making it easy for the device to integrate into the factory line, establishing a consistent quality control (QA) process without destroying the sample.

Detailed technical specifications


Type of deviceOnline gap distance measurement system
Measurement rangeGap 3 – 30 mm
Accuracy< 0.5 mm
Measurement speedUp to 5 Hz
Monitoring melting temperature~ 1500°C
Data & AnalysisData logging, Data trend visualization
Connection / InterfaceLine interface (Line interface)
Main applicationCz single crystal pulling furnace (Melted silicon)


Field of Study Materials Sciences or Semiconductor Technology
Brand NXT GmbH
ETA_SiCAM_NXT_V4.pdf
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Gap monitoring camera for Cz furnace ETA-SiCAM
Gap monitoring camera for Cz furnace ETA-SiCAM
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