Main features
Multi-functional etching/deposition: Some models like the EIS-220P are equipped with two ion guns, allowing for alternating both etching and deposition processes without removing the sample from the vacuum chamber, helping to maintain a clean environment and process efficiency.
Use of various gases: The machine can use both inert gases (such as Argon, Xenon) and reactive gases (such as Oxygen, CF4) as ion sources, allowing for both physical etching and chemical etching.
Angle of incidence control: Allows for adjustment of the ion beam angle to create structures with sloped sides.
Detailed description
- 8” and 12” segment configurations The world's first EBL system integrating comprehensive exposure capabilities on a 12-inch wafer. Supports a variety of sample sizes: from small sample pieces (in R&D), wafers with diameters of 2, 3, 4, 5, 6, 7, 8, 12 inches, to standard mask blanks 6025 and 9025.
- Automatic sample loading mechanism The system offers 3 flexible sample loading configurations according to needs: Single autoloader optimized for R&D applications; Multi autoloader for small/medium scale production; and Robot loader.
- Intuitive control software The specialized software "elms" is pre-integrated as a standard. The interface is designed with an independent modular structure for each function: CAD data conversion, beam adjustment, exposure, and SEM observation; helping to optimize the workflow. The system integrates account management features that support access rights for each user.