Key features
Two flexible modes (Thermal & PEALD): Supports both conventional thermal ALD and plasma-enhanced ALD (PEALD).
Powerful ICP Plasma Source: Equipped with a 1 kW inductively coupled plasma (Remote Inductively Coupled RF Plasma - ICP) source (frequency 13.56 MHz), supporting up to 6 types of plasma processing gases (such as Ar, O2, N2, H2, NH3). Plasma tubes can be optionally made of Fused Silica or Sapphire.
Proprietary PFT Technique: Helps optimize the flow of precursors directly onto the substrate surface (Wafer), enhancing chemical utilization efficiency and increasing thin film uniformity.
Load-Lock Chamber: Helps isolate the main reaction chamber from the external environment during sample loading/unloading, ensuring ultrahigh cleanliness and increasing operational efficiency. There is an option to integrate with a glovebox containing inert gas (Argon).
Precise temperature control: The substrate heating base can independently heat up to 600°C. The precursor delivery pipes are wrapped in heated aluminum cladding, independently controlled up to 250°C with 6 separate heating zones to prevent chemical condensation.
In-situ Ellipsometry Thin Film Thickness Measurement System: Allows real-time monitoring of the growth process and thickness of the thin film directly in the reaction chamber without the need to take samples outside.
eKLipse™ control software system: Intuitive, user-friendly interface, compatible with over 125 standard device interfaces in the industry (pumps, valves, power supplies, measuring devices...).
Detailed description
Technology & Principle
ALD-150LX applies atomic layer deposition (ALD) technology with two flexible modes: Thermal ALD and plasma-enhanced ALD (PEALD) using a 1 kW remote inductively coupled plasma (Remote ICP) source (13.56 MHz). The device operates based on the principle of self-limiting chemical reactions on the substrate surface. Combined with the proprietary precursor focusing technique (PFT™), the system optimizes gas flow kinetics, directing chemical vapor streams directly and evenly covering the wafer surface (up to 150mm), helping to control thin film thickness accurately at the level of individual atomic layers.
Precursor waste & uneven films: PFT™ completely addresses this by directing the gas flow, increasing the utilization efficiency of expensive chemicals and ensuring absolute uniformity.
Surface damage from plasma: The "Remote ICP" configuration only allows neutral free radicals to participate in the reaction, retaining high-energy ions to protect the film from bombardment.
Condensation & Sample contamination: The aluminum cladding system with 6 independent heating zones (up to 250°C) completely eliminates "cold spots" that cause chemical condensation. At the same time, the Load-Lock sample loading chamber prevents air and moisture from entering the main reaction chamber, preserving ultra-high cleanliness.
Time-consuming measurement to optimize the process: The in-situ optical measurement system (In-situ Ellipsometry) allows real-time (Real-time) monitoring of film thickness and growth rate without the need to vent the vacuum to take samples out.
Integration & Expansion
The ALD-150LX™ features flexible module upgrade capabilities, easily converting from a stand-alone machine (Stand-alone) to a part of a cluster system (Cluster Tool) through standard mechanical connections. The device can be directly integrated with a glovebox (Glovebox) containing inert gas to protect oxygen-sensitive samples. In terms of control, the eKLipse™ software with an intuitive interface supports source code compatibility with over 125 industry peripheral devices (pumps, valves, MFC...), allowing for a maximum expansion of 14 precursor sources to fabricate complex multilayer materials.