Copper(I) oxide (Cu₂O ) , a p-type semiconductor, has long been regarded as a promising material for solar energy conversion and photocatalysis at low cost. Doping nitrogen into Cu₂O is an important research topic due to its great potential in overcoming the main drawback of Cu₂O - high resistivity. However, there is still some debate regarding the impact of nitrogen doping on Cu₂O , and no comprehensive understanding has been provided.
This study presents a comparative study on nitrogen doping in Cu₂O . The SIMS depth profile of nitrogen concentration in Cu₂O : N doped with nitrogen plasma shows: (i) nitrogen incorporation into the film, (ii) gradual diffusion outward during the annealing process. The results indicate that to enhance the electrical conductivity of Cu₂O : N, it is necessary to increase the doping level and/or optimize the annealing process to balance the activation and outward diffusion.
Device IMS 7f-Auto provides depth distribution of trace elements (including light elements) with excellent sensitivity and high depth resolution, while maintaining high analytical throughput. This device is commonly used to study diffusion-separation processes, which are crucial for the development of new semiconductor devices.
Data were collected on IMS 7f at the University of Oslo (Norway). Excerpt from J. Li et al. NATURE Scientific Reports 4, 7240 (2014).