Optimizing doping (Mg, Si, Zn,...) and minimizing contamination (H, C, O, metals) is essential for high-performance LED devices. Using dynamic SIMS, it can record depth profiles of up to several micrometers within minutes, with detection limits from ppm down to ppb depending on the type of material to be analyzed. Dynamic SIMS also provides high depth resolution, widely used in ultra-shallow implantation technology. Therefore, CAMECA's SIMS devices are extremely useful in studying the composition and elemental distribution characteristics of dopants and impurities across different layers, making them the best choice for R&D and process control of new LED devices.
Giám sát thành phần cấu trúc và pha tạp
Based on a magnetic sector mass spectrometer, the IMS 7f-Auto achieves standard performance in sensitivity, depth resolution, and mass resolution. Depth profile data is regularly collected for both the substrate and the dopant. Experimental conditions are selected to provide the best detection limits for both p-type and n-type dopants while ensuring optimal throughput and ease of use.
Kiểm soát tạp chất và phân tích lỗi
In LED compounds, the unwanted contamination of H, C, and O into the defects of the GaN crystal structure affects electrical properties and alters the intended emission wavelength. Thanks to the optimized vacuum in the analysis chamber and the bombardment of a high-brightness primary beam, the IMS 7f-Auto outperforms all other analytical devices on the market in analyzing light elements. The detection limits for H, C, O are unmatched.