Possessing atomic probe tomography (APT) technology, EIKOS-UV atomic probe microscope brings the ability to detect single atoms with near-atomic spatial resolution. The device provides a quantitative 3D compositional map, being the optimal cost-effective solution for metallurgical research, additive manufacturing (3D printing), and thin films with superior performance.

Is the generation of large configuration secondary ion mass spectrometers (LG-SIMS) the most advanced from CAMECA, a device that provides sensitivity and spatial resolution - mass at an absolute level. This is the optimal cost-effective analytical solution for geochemical research, trace element measurement, mineral dating, and analysis of micro-particles for nuclear safety control.

Equipped with dual magnetic convergence SIMS technology, the IMS 7f-Auto secondary ion mass spectrometer provides excellent depth resolution with a detection limit of ppb. This is a fully automated analytical solution that delivers high throughput for the semiconductor, optoelectronics, and materials industries, maximizing productivity with continuous operation 24/7.

Developed from the renowned IMS 7f platform, the secondary ion mass spectrometry (SIMS) with ACTINIS casing features an advanced radiation protection system, allowing for the measurement of radioactive samples up to 2 Gy/h. The device achieves sub-micron spatial resolution, optimizing transmission and the ability to measure isotope ratios. This is a safe automation solution, ideal for optimizing the nuclear fuel cycle and waste management.

Is a secondary ion mass spectrometer IMS 7f-GEO specialized from CAMECA, integrating a dual detector (FC/FC) and Electron Multiplier. The device offers an ultra-fast peak switching speed of 0.3s, reducing measurement time from >3000s to 56s. This is the optimal High-throughput solution for analyzing stable isotopes and rare earth elements (REE) in geochemistry.

With advanced EXLIE ion beam technology, the SIMS AKONIS secondary mass spectrometer achieves a resolution of <1 nm/decade. This is the optimal in-line solution for high-volume semiconductor manufacturing (HVM), enabling measurement of film composition and ion implantation profiles on 20 µm ultra-small pads fully automated without the need for SIMS experts.